Zilog Single FETs, MOSFETs IXTC13N50

Description
N-Channel 500V 12A (Tc) 140W (Tc) Through Hole ISOPLUS220™
Request a Quote Datasheet
Description
N-Channel 500V 12A (Tc) 140W (Tc) Through Hole ISOPLUS220™
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IXTC13N50-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTC13N50-ND
Single FETs, MOSFETs IXTC13N50-ND
N-Channel 500V 12A (Tc) 140W (Tc) Through Hole ISOPLUS220™

N-Channel 500V 12A (Tc) 140W (Tc) Through Hole ISOPLUS220™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1179799-IXTC13N50 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1179799-IXTC13N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1179799-IXTC13N50
Win Source Part Number: 1179799-IXTC13N50 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Power Dissipation (Max): 140W (Tc) Mounting Type: Through Hole Package / Case: ISOPLUS220™ Supplier Device Package: ISOPLUS220™ Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 60 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1179799-IXTC13N50
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Power Dissipation (Max): 140W (Tc)
Mounting Type: Through Hole
Package / Case: ISOPLUS220™
Supplier Device Package: ISOPLUS220™
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTC13N50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTC13N50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTC13N50
MOSFET N-CH 500V 12A ISOPLUS220

MOSFET N-CH 500V 12A ISOPLUS220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTC13N50-ND 1179799-IXTC13N50 IXTC13N50
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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