Zilog Single FETs, MOSFETs IXTA90N055T2

Description
N-Channel 55V 90A (Tc) 150W (Tc) Surface Mount TO-263AA
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Description
N-Channel 55V 90A (Tc) 150W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTA90N055T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA90N055T2-ND
Single FETs, MOSFETs IXTA90N055T2-ND
N-Channel 55V 90A (Tc) 150W (Tc) Surface Mount TO-263AA

N-Channel 55V 90A (Tc) 150W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346846-IXTA90N055T2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346846-IXTA90N055T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346846-IXTA90N055T2
Win Source Part Number: 1346846-IXTA90N055T2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: TrenchT2™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 55 V Power Dissipation (Max): 150W (Tc) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB Supplier Device Package: TO-263AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTA90 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V

Win Source Part Number: 1346846-IXTA90N055T2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchT2™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 55 V
Power Dissipation (Max): 150W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTA90
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 90 Amps 55V 0.0084 Rds

MOSFET 90 Amps 55V 0.0084 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA90N055T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA90N055T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA90N055T2
MOSFET N-CH 55V 90A TO263

MOSFET N-CH 55V 90A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTA90N055T2-ND 1346846-IXTA90N055T2 IXTA90N055T2 IXTA90N055T2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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