Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N12T2 IXTA80N12T2

Description
Manufacturer: IXYS Win Source Part Number: 777651-IXTA80N12T2 Series: TrenchT2 Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Family Name: IXTA80N12T2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 120V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4740pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 325W (Tc) Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): STB80NF12T4; STB80NF12; Introduction Date: August 06, 2013 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N12T2 - 777651-IXTA80N12T2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTA80N12T2-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA80N12T2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: IXYS Win Source Part Number: 777651-IXTA80N12T2 Series: TrenchT2 Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Family Name: IXTA80N12T2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 120V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4740pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 325W (Tc) Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): STB80NF12T4; STB80NF12; Introduction Date: August 06, 2013 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance
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Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N12T2 - 777651-IXTA80N12T2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N12T2
777651-IXTA80N12T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N12T2 777651-IXTA80N12T2
Manufacturer: IXYS Win Source Part Number: 777651-IXTA80N12T2 Series: TrenchT2 Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Family Name: IXTA80N12T2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 120V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4740pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 325W (Tc) Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 40A, 10V Alternative Parts (Cross-Reference): STB80NF12T4; STB80NF12; Introduction Date: August 06, 2013 Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 777651-IXTA80N12T2
Series: TrenchT2
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Family Name: IXTA80N12T2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263 (IXTA)
Channel Type Type: N
Drain Source Voltage: 120V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4740pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 325W (Tc)
Rds On (Maximum) @ Id, Vgs: 17 mOhm @ 40A, 10V
Alternative Parts (Cross-Reference): STB80NF12T4; STB80NF12;
Introduction Date: August 06, 2013
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IXTA80N12T2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA80N12T2-ND
Single FETs, MOSFETs IXTA80N12T2-ND
N-Channel 120V 80A (Tc) 325W (Tc) Surface Mount TO-263AA

N-Channel 120V 80A (Tc) 325W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA80N12T2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA80N12T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA80N12T2
MOSFET N-CH 120V 80A TO263

MOSFET N-CH 120V 80A TO263

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTA80N12T2
MOSFET IXTA80N12T2
MOSFET TrenchT2 MOSFETs Power MOSFETs

MOSFET TrenchT2 MOSFETs Power MOSFETs

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 777651-IXTA80N12T2 IXTA80N12T2-ND IXTA80N12T2 IXTA80N12T2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA80N12T2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
PD 325000 milliwatts
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