Zilog Single FETs, MOSFETs IXTA76P10T

Description
P-Channel 100V 76A (Tc) 298W (Tc) Surface Mount TO-263AA
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Description
P-Channel 100V 76A (Tc) 298W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet

Suppliers

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Description
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Single FETs, MOSFETs - 238-IXTA76P10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTA76P10T-ND
Single FETs, MOSFETs 238-IXTA76P10T-ND
P-Channel 100V 76A (Tc) 298W (Tc) Surface Mount TO-263AA

P-Channel 100V 76A (Tc) 298W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1351302-IXTA76P10T - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1351302-IXTA76P10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1351302-IXTA76P10T
Win Source Part Number: 1351302-IXTA76P10T Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: TrenchP™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 100 V Power Dissipation (Max): 298W (Tc) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB Supplier Device Package: TO-263AA Vgs (Max): ±15V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 37 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTA76 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V

Win Source Part Number: 1351302-IXTA76P10T
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchP™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 100 V
Power Dissipation (Max): 298W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Supplier Device Package: TO-263AA
Vgs (Max): ±15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 37 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTA76
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA76P10T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA76P10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA76P10T
MOSFET P-CH 100V 76A TO263

MOSFET P-CH 100V 76A TO263

Supplier's Site
Sheung Wan, Hong Kong
MOSFET -76 Amps -100V 0.024 Rds

MOSFET -76 Amps -100V 0.024 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXTA76P10T-ND 1351302-IXTA76P10T IXTA76P10T IXTA76P10T
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel
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