Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA6N50D2 IXTA6N50D2

Description
Manufacturer: IXYS Win Source Part Number: 1191245-IXTA6N50D2 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET FET Feature: Depletion Mode Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Family Name: IXTA6N50D2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 500V Gate Charge (Qg) (Maximum) @ Vgs: 96nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 2800pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 500 mOhm @ 3A, 0V Alternative Parts (Cross-Reference): STB10NB50; STB10NB50T4; PHB11N50E; Introduction Date: March 18, 2011 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA6N50D2 - 1191245-IXTA6N50D2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 238-IXTA6N50D2-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IXTA6N50D2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA6N50D2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1191245-IXTA6N50D2 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET FET Feature: Depletion Mode Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Family Name: IXTA6N50D2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 500V Gate Charge (Qg) (Maximum) @ Vgs: 96nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 2800pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 500 mOhm @ 3A, 0V Alternative Parts (Cross-Reference): STB10NB50; STB10NB50T4; PHB11N50E; Introduction Date: March 18, 2011 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA6N50D2 - 1191245-IXTA6N50D2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA6N50D2
1191245-IXTA6N50D2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA6N50D2 1191245-IXTA6N50D2
Manufacturer: IXYS Win Source Part Number: 1191245-IXTA6N50D2 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET FET Feature: Depletion Mode Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Family Name: IXTA6N50D2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 500V Gate Charge (Qg) (Maximum) @ Vgs: 96nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 2800pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 500 mOhm @ 3A, 0V Alternative Parts (Cross-Reference): STB10NB50; STB10NB50T4; PHB11N50E; Introduction Date: March 18, 2011 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2025 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191245-IXTA6N50D2
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
FET Feature: Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Family Name: IXTA6N50D2
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263 (IXTA)
Channel Type Type: N
Drain Source Voltage: 500V
Gate Charge (Qg) (Maximum) @ Vgs: 96nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 2800pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 500 mOhm @ 3A, 0V
Alternative Parts (Cross-Reference): STB10NB50; STB10NB50T4; PHB11N50E;
Introduction Date: March 18, 2011
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2025
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTA6N50D2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTA6N50D2-ND
Single FETs, MOSFETs 238-IXTA6N50D2-ND
N-Channel 500V 6A (Tc) 300W (Tc) Surface Mount TO-263AA

N-Channel 500V 6A (Tc) 300W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Single FETs, MOSFETs - IXTA6N50D2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTA6N50D2
Single FETs, MOSFETs IXTA6N50D2
MOSFET N-CH 500V 6A TO263

MOSFET N-CH 500V 6A TO263

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA6N50D2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA6N50D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA6N50D2
MOSFET N-CH 500V 6A TO263

MOSFET N-CH 500V 6A TO263

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTA6N50D2
MOSFET IXTA6N50D2
MOSFET N-CH MOSFETS (D2) 500V 6A

MOSFET N-CH MOSFETS (D2) 500V 6A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191245-IXTA6N50D2 238-IXTA6N50D2-ND IXTA6N50D2 IXTA6N50D2 IXTA6N50D2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA6N50D2 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
MOSFET Operating Mode Depletion
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 96 nC @ 5 V
Packing Method Tube; Tube Tube; Tube
Unlock Full Specs
to access all available technical data