Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA50N25T IXTA50N25T

Description
Manufacturer: IXYS Win Source Part Number: 205701-IXTA50N25T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 50 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA50N25T - 205701-IXTA50N25T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTA50N25T-ND - DigiKey
    DigiKey
  • MOSFET N-CH 250V 50A TO-263 - 401-IXTA50N25T - Utmel Electronic Limited
    Utmel Electronic Limited
  • Single FETs, MOSFETs - IXTA50N25T - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA50N25T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 205701-IXTA50N25T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 50 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA50N25T - 205701-IXTA50N25T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA50N25T
205701-IXTA50N25T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA50N25T 205701-IXTA50N25T
Manufacturer: IXYS Win Source Part Number: 205701-IXTA50N25T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 50 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205701-IXTA50N25T
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 4000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 50 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTA50N25T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA50N25T-ND
Single FETs, MOSFETs IXTA50N25T-ND
N-Channel 250V 50A (Tc) 400W (Tc) Surface Mount TO-263AA

N-Channel 250V 50A (Tc) 400W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTA50N25T
MOSFET IXTA50N25T
MOSFET 50 Amps 250V 50 Rds

MOSFET 50 Amps 250V 50 Rds

Buy Now
MOSFET N-CH 250V 50A TO-263 - 401-IXTA50N25T - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 250V 50A TO-263
401-IXTA50N25T
MOSFET N-CH 250V 50A TO-263 401-IXTA50N25T
MOSFET N-CH 250V 50A TO-263

MOSFET N-CH 250V 50A TO-263

Supplier's Site
Single FETs, MOSFETs - IXTA50N25T - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTA50N25T
Single FETs, MOSFETs IXTA50N25T
MOSFET N-CH 250V 50A TO263

MOSFET N-CH 250V 50A TO263

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA50N25T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA50N25T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA50N25T
MOSFET N-CH 250V 50A TO263

MOSFET N-CH 250V 50A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Utmel Electronic Limited ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 205701-IXTA50N25T IXTA50N25T-ND IXTA50N25T 401-IXTA50N25T IXTA50N25T IXTA50N25T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA50N25T Single FETs, MOSFETs MOSFET MOSFET N-CH 250V 50A TO-263 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 250 volts 250 volts 250 volts
PD 400000 milliwatts 400000 milliwatts 400000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3; TO-263 (IXTA) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB 4000 pF @ 25 V
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