Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA4N80P IXTA4N80P

Description
Manufacturer: IXYS Win Source Part Number: 777648-IXTA4N80P Series: PolarHV Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Family Name: IXTA4N80P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5.5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 14.2nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 750pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 100W (Tc) Rds On (Maximum) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): IXTA4N80P-TRL; Introduction Date: November 30, 2006 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA4N80P - 777648-IXTA4N80P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTA4N80P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA4N80P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: IXYS Win Source Part Number: 777648-IXTA4N80P Series: PolarHV Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Family Name: IXTA4N80P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5.5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 14.2nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 750pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 100W (Tc) Rds On (Maximum) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): IXTA4N80P-TRL; Introduction Date: November 30, 2006 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA4N80P - 777648-IXTA4N80P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA4N80P
777648-IXTA4N80P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA4N80P 777648-IXTA4N80P
Manufacturer: IXYS Win Source Part Number: 777648-IXTA4N80P Series: PolarHV Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Family Name: IXTA4N80P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 800V Vgs(th) (Maximum) @ Id: 5.5V @ 100μA Gate Charge (Qg) (Maximum) @ Vgs: 14.2nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 750pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 100W (Tc) Rds On (Maximum) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V Alternative Parts (Cross-Reference): IXTA4N80P-TRL; Introduction Date: November 30, 2006 Estimated EOL Date: 2027 Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777648-IXTA4N80P
Series: PolarHV
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Family Name: IXTA4N80P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263 (IXTA)
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 5.5V @ 100μA
Gate Charge (Qg) (Maximum) @ Vgs: 14.2nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 750pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 100W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.4 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): IXTA4N80P-TRL;
Introduction Date: November 30, 2006
Estimated EOL Date: 2027
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTA4N80P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA4N80P-ND
Single FETs, MOSFETs IXTA4N80P-ND
N-Channel 800V 3.6A (Tc) 100W (Tc) Surface Mount TO-263AA

N-Channel 800V 3.6A (Tc) 100W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA4N80P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA4N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA4N80P
MOSFET N-CH 800V 3.6A TO263

MOSFET N-CH 800V 3.6A TO263

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTA4N80P
MOSFET IXTA4N80P
MOSFET 3.5 Amps 800V 3 Rds

MOSFET 3.5 Amps 800V 3 Rds

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 777648-IXTA4N80P IXTA4N80P-ND IXTA4N80P IXTA4N80P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA4N80P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
PD 100000 milliwatts
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