Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N50D2 IXTA3N50D2

Description
Manufacturer: IXYS Win Source Part Number: 1191241-IXTA3N50D2 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET FET Feature: Depletion Mode Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Family Name: IXTA3N50D2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 500V Gate Charge (Qg) (Maximum) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 1070pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V Introduction Date: December 09, 2009 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1191241-IXTA3N50D2 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET FET Feature: Depletion Mode Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Family Name: IXTA3N50D2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 500V Gate Charge (Qg) (Maximum) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 1070pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V Introduction Date: December 09, 2009 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N50D2 - 1191241-IXTA3N50D2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N50D2
1191241-IXTA3N50D2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N50D2 1191241-IXTA3N50D2
Manufacturer: IXYS Win Source Part Number: 1191241-IXTA3N50D2 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET FET Feature: Depletion Mode Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Family Name: IXTA3N50D2 Categories: Discrete Semiconductor Products Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 500V Gate Charge (Qg) (Maximum) @ Vgs: 40nC @ 5V Input Capacitance (Ciss) (Maximum) @ Vds: 1070pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 125W (Tc) Rds On (Maximum) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V Introduction Date: December 09, 2009 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191241-IXTA3N50D2
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
FET Feature: Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Family Name: IXTA3N50D2
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263 (IXTA)
Channel Type Type: N
Drain Source Voltage: 500V
Gate Charge (Qg) (Maximum) @ Vgs: 40nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds: 1070pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 125W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.5 Ohm @ 1.5A, 0V
Introduction Date: December 09, 2009
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTA3N50D2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTA3N50D2-ND
Single FETs, MOSFETs 238-IXTA3N50D2-ND
N-Channel 500V 3A (Tc) 125W (Tc) Surface Mount TO-263AA

N-Channel 500V 3A (Tc) 125W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET N-CH MOSFETS (D2) 500V 3A

MOSFET N-CH MOSFETS (D2) 500V 3A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA3N50D2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA3N50D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA3N50D2
MOSFET N-CH 500V 3A TO263

MOSFET N-CH 500V 3A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1191241-IXTA3N50D2 238-IXTA3N50D2-ND IXTA3N50D2 IXTA3N50D2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N50D2 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Depletion
PD 125000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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