Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N110 IXTA3N110

Description
Manufacturer: IXYS Win Source Part Number: 777646-IXTA3N110 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Family Name: IXTA3N110 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 1100V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1350pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 4 Ohm @ 1.5A, 10V Alternative Parts (Cross-Reference): MTB3N100E; MTB3N100ET4; IXTA3N110-TRL; Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 777646-IXTA3N110 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Family Name: IXTA3N110 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 1100V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1350pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 4 Ohm @ 1.5A, 10V Alternative Parts (Cross-Reference): MTB3N100E; MTB3N100ET4; IXTA3N110-TRL; Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N110 - 777646-IXTA3N110 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N110
777646-IXTA3N110
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N110 777646-IXTA3N110
Manufacturer: IXYS Win Source Part Number: 777646-IXTA3N110 Packaging: Tube Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Family Name: IXTA3N110 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 (IXTA) Channel Type Type: N Drain Source Voltage: 1100V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 42nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1350pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 150W (Tc) Rds On (Maximum) @ Id, Vgs: 4 Ohm @ 1.5A, 10V Alternative Parts (Cross-Reference): MTB3N100E; MTB3N100ET4; IXTA3N110-TRL; Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777646-IXTA3N110
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Family Name: IXTA3N110
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263 (IXTA)
Channel Type Type: N
Drain Source Voltage: 1100V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1350pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 4 Ohm @ 1.5A, 10V
Alternative Parts (Cross-Reference): MTB3N100E; MTB3N100ET4; IXTA3N110-TRL;
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTA3N110-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA3N110-ND
Single FETs, MOSFETs IXTA3N110-ND
N-Channel 1100V 3A (Tc) 150W (Tc) Surface Mount TO-263AA

N-Channel 1100V 3A (Tc) 150W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA3N110 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA3N110
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA3N110
MOSFET N-CH 1100V 3A TO263

MOSFET N-CH 1100V 3A TO263

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 3 Amps 1100V 4 Rds

MOSFET 3 Amps 1100V 4 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 777646-IXTA3N110 IXTA3N110-ND IXTA3N110 IXTA3N110
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N110 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
PD 150000 milliwatts
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