Manufacturer: IXYS
Win Source Part Number: 777646-IXTA3N110
Packaging: Tube
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Family Name: IXTA3N110
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263 (IXTA)
Channel Type Type: N
Drain Source Voltage: 1100V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 42nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1350pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 150W (Tc)
Rds On (Maximum) @ Id, Vgs: 4 Ohm @ 1.5A, 10V
Alternative Parts (Cross-Reference): MTB3N100E; MTB3N100ET4; IXTA3N110-TRL;
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
N-Channel 1100V 3A (Tc) 150W (Tc) Surface Mount TO-263AA
MOSFET N-CH 1100V 3A TO263
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 777646-IXTA3N110 | IXTA3N110-ND | IXTA3N110 | IXTA3N110 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA3N110 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 150000 milliwatts |
