Manufacturer: IXYS
Win Source Part Number: 1191239-IXTA3N100D2
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
FET Feature: Depletion Mode
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263 (IXTA)
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 125W
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1000V
Id - Continuous Drain Current: 3A
Rds On (Maximum) at Id, Vgs: 5.5Ohm at 1.5A, 0V
Gate Charge (Qg) (Maximum) at Vgs: 37.5nC at 5V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 1020pF at 25V
N-Channel 1000V 3A (Tc) 125W (Tc) Surface Mount TO-263AA
MOSFET N-CH 1000V 3A TO263
MOSFET N-CH MOSFETS (D2) 1000V 3A
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191239-IXTA3N100D2 | 238-IXTA3N100D2-ND | IXTA3N100D2 | IXTA3N100D2 |
| Product Name | FETs - Single - IXTA3N100D2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| MOSFET Operating Mode | Depletion | |||
| V(BR)DSS | 1000 volts | |||
| PD | 125000 milliwatts |
