Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA36N30P IXTA36N30P

Description
Manufacturer: IXYS Win Source Part Number: 1049733-IXTA36N30P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 110 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA36N30P - 1049733-IXTA36N30P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTA36N30P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - 238-IXTA36N30P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA36N30P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049733-IXTA36N30P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 110 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA36N30P - 1049733-IXTA36N30P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA36N30P
1049733-IXTA36N30P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA36N30P 1049733-IXTA36N30P
Manufacturer: IXYS Win Source Part Number: 1049733-IXTA36N30P Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 110 mOhm @ 18A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049733-IXTA36N30P
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 110 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IXTA36N30P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTA36N30P
Single FETs, MOSFETs IXTA36N30P
MOSFET N-CH 300V 36A TO263

MOSFET N-CH 300V 36A TO263

Supplier's Site Datasheet
Single FETs, MOSFETs - 238-IXTA36N30P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTA36N30P-ND
Single FETs, MOSFETs 238-IXTA36N30P-ND
N-Channel 300V 36A (Tc) 300W (Tc) Surface Mount TO-263AA

N-Channel 300V 36A (Tc) 300W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA36N30P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA36N30P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA36N30P
MOSFET N-CH 300V 36A TO263

MOSFET N-CH 300V 36A TO263

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTA36N30P
MOSFET IXTA36N30P
MOSFET MOSFET N-CH 300V 36A

MOSFET MOSFET N-CH 300V 36A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049733-IXTA36N30P IXTA36N30P 238-IXTA36N30P-ND IXTA36N30P IXTA36N30P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA36N30P Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts 300 volts
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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