MOSFET N-CH 300V 36A TO263
Manufacturer: IXYS
Win Source Part Number: 1049733-IXTA36N30P
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 110 mOhm @ 18A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
N-Channel 300V 36A (Tc) 300W (Tc) Surface Mount TO-263AA
MOSFET N-CH 300V 36A TO263
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTA36N30P | 1049733-IXTA36N30P | 238-IXTA36N30P-ND | IXTA36N30P | IXTA36N30P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA36N30P | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 300 volts | 300 volts | |||
| IDSS | 36000 milliamps |
