Zilog Single FETs, MOSFETs IXTA34N65X2

Description
N-Channel 650V 34A (Tc) 540W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet
Description
N-Channel 650V 34A (Tc) 540W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTA34N65X2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA34N65X2-ND
Single FETs, MOSFETs IXTA34N65X2-ND
N-Channel 650V 34A (Tc) 540W (Tc) Surface Mount TO-263AA

N-Channel 650V 34A (Tc) 540W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346699-IXTA34N65X2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346699-IXTA34N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346699-IXTA34N65X2
Win Source Part Number: 1346699-IXTA34N65X2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Ultra X2 Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Power Dissipation (Max): 540W (Tc) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB Supplier Device Package: TO-263AA Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 43 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTA34 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V

Win Source Part Number: 1346699-IXTA34N65X2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Ultra X2
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Power Dissipation (Max): 540W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Supplier Device Package: TO-263AA
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 43 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTA34
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA34N65X2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA34N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA34N65X2
MOSFET N-CH 650V 34A TO263AA

MOSFET N-CH 650V 34A TO263AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS

MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA34N65X2-ND 1346699-IXTA34N65X2 IXTA34N65X2 IXTA34N65X2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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