Zilog Single FETs, MOSFETs IXTA2N80

Description
N-Channel 800V 2A (Tc) 54W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet
Description
N-Channel 800V 2A (Tc) 54W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTA2N80-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA2N80-ND
Single FETs, MOSFETs IXTA2N80-ND
N-Channel 800V 2A (Tc) 54W (Tc) Surface Mount TO-263AA

N-Channel 800V 2A (Tc) 54W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
FETs - Single - IXTA2N80 - 1191236-IXTA2N80 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTA2N80
1191236-IXTA2N80
FETs - Single - IXTA2N80 1191236-IXTA2N80
Manufacturer: IXYS Win Source Part Number: 1191236-IXTA2N80 Packaging: Bulk Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-263 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 54W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 800V Id - Continuous Drain Current: 2A Rds On (Maximum) at Id, Vgs: 6.2Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 440pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191236-IXTA2N80
Packaging: Bulk
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 54W
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 2A
Rds On (Maximum) at Id, Vgs: 6.2Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 5.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 22nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 440pF at 25V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA2N80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA2N80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA2N80
MOSFET N-CH 800V 2A TO263

MOSFET N-CH 800V 2A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTA2N80-ND 1191236-IXTA2N80 IXTA2N80
Product Name Single FETs, MOSFETs FETs - Single - IXTA2N80 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 800 volts
Unlock Full Specs
to access all available technical data