Zilog Single FETs, MOSFETs IXTA28P065T

Description
P-Channel 65V 28A (Tc) 83W (Tc) Surface Mount TO-263AA
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Description
P-Channel 65V 28A (Tc) 83W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IXTA28P065T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA28P065T-ND
Single FETs, MOSFETs IXTA28P065T-ND
P-Channel 65V 28A (Tc) 83W (Tc) Surface Mount TO-263AA

P-Channel 65V 28A (Tc) 83W (Tc) Surface Mount TO-263AA

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA28P065T - 1049729-IXTA28P065T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA28P065T
1049729-IXTA28P065T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA28P065T 1049729-IXTA28P065T
Manufacturer: IXYS Win Source Part Number: 1049729-IXTA28P065T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 65V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 46nC @ 10V Max Input Capacitance: 2030pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 45 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049729-IXTA28P065T
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 65V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 46nC @ 10V
Max Input Capacitance: 2030pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 45 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA28P065T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA28P065T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA28P065T
MOSFET P-CH 65V 28A TO263

MOSFET P-CH 65V 28A TO263

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 28 Amps 65V 0.045 Rds

MOSFET 28 Amps 65V 0.045 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA28P065T-ND 1049729-IXTA28P065T IXTA28P065T IXTA28P065T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA28P065T Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 (IXTA) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 65 volts
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