N-Channel 1200V 1.4A (Tc) 86W (Tc) Surface Mount TO-263AA
Manufacturer: IXYS
Win Source Part Number: 876118-IXTA1R4N120P
Series: Polar™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 1.4A (Tc) 86W (Tc) Surface Mount TO-263AA
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Tube
Mounting: Surface Mount
Family Name: IXTA1
Categories: Discrete Semiconductor Products
Case / Package: TO-263AA
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 47 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 1200V 1.4A TO263
MOSFET N-CH 1200V 1.4A TO263
MOSFET N-CH 1200V 1.4A TO-263
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 238-IXTA1R4N120P-ND | 876118-IXTA1R4N120P | IXTA1R4N120P | IXTA1R4N120P | IXTA1R4N120P | 401-IXTA1R4N120P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA1R4N120P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | MOSFET N-CH 1200V 1.4A TO-263 |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; TO-263AA | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 10V | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 1200 volts | 1200 volts |
