N-Channel 2000V 1A (Tc) 125W (Tc) Surface Mount TO-263AA
Win Source Part Number: 1031669-IXTA1N200P3H
Category: Discrete Semiconductor Products>Transistors
Series: Polar P3™
Package: Tube
Standard Package: 50
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 2000 V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AA
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STH3N150-2; IRGS14C40LPBF; IRF9540NSTRLPBF; IRFS4620TRLPBF; FDB3632; FDB045AN08A0;
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTA1
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 2000V 1A TO263
MOSFET 2000V/1A HV Power MOSFET, TO-263HV
MOSFET N-CH 2000V 1A TO263
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTA1N200P3HV-ND | 1031669-IXTA1N200P3HV | IXTA1N200P3HV | IXTA1N200P3HV | IXTA1N200P3HV |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| PD | 125000 milliwatts | 125000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
