Zilog Single FETs, MOSFETs IXTA1N100

Description
N-Channel 1000V 1.5A (Tc) 54W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet
Description
N-Channel 1000V 1.5A (Tc) 54W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTA1N100-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA1N100-ND
Single FETs, MOSFETs IXTA1N100-ND
N-Channel 1000V 1.5A (Tc) 54W (Tc) Surface Mount TO-263AA

N-Channel 1000V 1.5A (Tc) 54W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
FETs - Single - IXTA1N100 - 1191235-IXTA1N100 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXTA1N100
1191235-IXTA1N100
FETs - Single - IXTA1N100 1191235-IXTA1N100
Manufacturer: IXYS Win Source Part Number: 1191235-IXTA1N100 Packaging: Tube Mounting Style: SMD Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-263 (IXTA) Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Power Dissipation (Maximum): 54W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Sufficient Manufacturer Pack Quantity: 50 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 1000V Id - Continuous Drain Current: 1.5A Rds On (Maximum) at Id, Vgs: 11Ohm at 1A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 25μA Gate Charge (Qg) (Maximum) at Vgs: 14.5nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 400pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191235-IXTA1N100
Packaging: Tube
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-263 (IXTA)
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Maximum): 54W
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 1000V
Id - Continuous Drain Current: 1.5A
Rds On (Maximum) at Id, Vgs: 11Ohm at 1A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 25μA
Gate Charge (Qg) (Maximum) at Vgs: 14.5nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 400pF at 25V

Buy Now
MOSFET N-CH 1000V 1.5A TO-263 - 401-IXTA1N100 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 1000V 1.5A TO-263
401-IXTA1N100
MOSFET N-CH 1000V 1.5A TO-263 401-IXTA1N100
MOSFET N-CH 1000V 1.5A TO-263

MOSFET N-CH 1000V 1.5A TO-263

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA1N100 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA1N100
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA1N100
MOSFET N-CH 1000V 1.5A TO263

MOSFET N-CH 1000V 1.5A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTA1N100-ND 1191235-IXTA1N100 401-IXTA1N100 IXTA1N100
Product Name Single FETs, MOSFETs FETs - Single - IXTA1N100 MOSFET N-CH 1000V 1.5A TO-263 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 1000 volts 1000 volts
PD 54000 milliwatts 54000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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