Zilog Single FETs, MOSFETs IXTA18P10T

Description
P-Channel 100V 18A (Tc) 83W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet
Description
P-Channel 100V 18A (Tc) 83W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTA18P10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA18P10T-ND
Single FETs, MOSFETs IXTA18P10T-ND
P-Channel 100V 18A (Tc) 83W (Tc) Surface Mount TO-263AA

P-Channel 100V 18A (Tc) 83W (Tc) Surface Mount TO-263AA

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA18P10T - 1049723-IXTA18P10T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA18P10T
1049723-IXTA18P10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA18P10T 1049723-IXTA18P10T
Manufacturer: IXYS Win Source Part Number: 1049723-IXTA18P10T Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 18A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 39nC @ 10V Max Input Capacitance: 2100pF @ 25V Maximum Gate-Source Voltage: ±15V Maximum Rds On at Id,Vgs: 120 mOhm @ 9A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1049723-IXTA18P10T
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 2100pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 120 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA18P10T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA18P10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA18P10T
MOSFET P-CH 100V 18A TO263

MOSFET P-CH 100V 18A TO263

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 18 Amps 100V 0.12 Rds

MOSFET 18 Amps 100V 0.12 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTA18P10T-ND 1049723-IXTA18P10T IXTA18P10T IXTA18P10T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA18P10T Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 (IXTA) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 100 volts
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