Manufacturer: IXYS
Win Source Part Number: 1000902-IXTA110N055T
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 57nC @ 10V
Max Input Capacitance: 3060pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): SPB80N06S2-07; IPB80N06S2-07; STB80NF55-08T4; IXTA110N055T2;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 50
N-Channel 55V 110A (Tc) 180W (Tc) Surface Mount TO-263AA
MOSFET N-CH 55V 110A TO263
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1000902-IXTA110N055T2 | IXTA110N055T2-ND | IXTA110N055T2 | IXTA110N055T2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA110N055T2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 55 volts | |||
| PD | 180000 milliwatts |
