Zilog Single FETs, MOSFETs IXTA110N055T2

Description
N-Channel 55V 110A (Tc) 180W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet
Description
N-Channel 55V 110A (Tc) 180W (Tc) Surface Mount TO-263AA
Request a Quote Datasheet

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Single FETs, MOSFETs - IXTA110N055T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTA110N055T2-ND
Single FETs, MOSFETs IXTA110N055T2-ND
N-Channel 55V 110A (Tc) 180W (Tc) Surface Mount TO-263AA

N-Channel 55V 110A (Tc) 180W (Tc) Surface Mount TO-263AA

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA110N055T2 - 1000902-IXTA110N055T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA110N055T2
1000902-IXTA110N055T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA110N055T2 1000902-IXTA110N055T2
Manufacturer: IXYS Win Source Part Number: 1000902-IXTA110N055T 2 Packaging: Tube/Rail Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 180W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-263 (IXTA) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 57nC @ 10V Max Input Capacitance: 3060pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.6 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): SPB80N06S2-07; IPB80N06S2-07; STB80NF55-08T4; IXTA110N055T2; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1000902-IXTA110N055T2
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 57nC @ 10V
Max Input Capacitance: 3060pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): SPB80N06S2-07; IPB80N06S2-07; STB80NF55-08T4; IXTA110N055T2;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 50

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Sheung Wan, Hong Kong
MOSFET 110 Amps 55V 0.0066 Rds

MOSFET 110 Amps 55V 0.0066 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTA110N055T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTA110N055T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTA110N055T2
MOSFET N-CH 55V 110A TO263

MOSFET N-CH 55V 110A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTA110N055T2-ND 1000902-IXTA110N055T2 IXTA110N055T2 IXTA110N055T2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA110N055T2 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263 (IXTA) TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 55 volts
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