MOSFET N-CH 1000V 800MA TO263
Manufacturer: IXYS
Win Source Part Number: 876115-IXTA08N100D2
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 800mA (Tc) 60W (Tc) Surface Mount TO-263AA
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Tube
Mounting: Surface Mount
Family Name: IXTA08
Categories: Discrete Semiconductor Products
Case / Package: TO-263AA
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited
Quantity per package: 50
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
N-Channel 1000V 800mA (Tc) 60W (Tc) Surface Mount TO-263AA
MOSFET N-CH 1000V 800MA TO263
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | IXTA08N100D2 | 876115-IXTA08N100D2 | 238-IXTA08N100D2-ND | IXTA08N100D2 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA08N100D2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||
| V(BR)DSS | 1000 volts | |||
| IDSS | 800 milliamps |
