Manufacturer: IXYS
Win Source Part Number: 205699-IXTA06N120P
Packaging: Tube/Rail
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-263 (IXTA)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 1200V (1.2kV)
Continuous Drain Current at 25°C: 600mA (Tc)
Gate-Source Threshold Voltage: 4.5V @ 50μA
Max Gate Charge: 13.3nC @ 10V
Max Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 32 Ohm @ 300mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
N-Channel 1200V 600mA (Tc) 42W (Tc) Surface Mount TO-263AA
MOSFET N-CH 1200V 600MA TO263
MOSFET N-CH 1200V 0.6A TO-263
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 205699-IXTA06N120P | IXTA06N120P-ND | IXTA06N120P | 401-IXTA06N120P | IXTA06N120P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTA06N120P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 1200V 0.6A TO-263 | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 1200 volts | 1200 volts | |||
| PD | 42000 milliwatts | 42000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-263; SOT3; TO-263 (IXTA) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
