The IXRFD615 is a high-speed, low-side RF MOSFET driver designed for applications requiring rapid switching and high current capabilities. It can source and sink up to 15 A of peak current, with voltage rise and fall times of less than 5 ns and minimum pulse widths of 8 ns. The driver operates within a wide voltage range of 8V to 30V and is compatible with TTL and CMOS inputs, ensuring versatility in various circuit designs. This driver is particularly suited for Class D and E RF applications, multi-MHz switch mode supplies, and pulse generator circuits. Its low output impedance and quiescent supply current contribute to efficient performance, while the design minimizes internal delays to reduce the risk of cross conduction. The IXRFD615 is packaged in a low-inductance RF package, which helps optimize switching performance by minimizing stray lead inductances. Engineers considering the IXRFD615 for their projects should note its robust thermal characteristics, with an operating temperature range of -40¬8C to 85¬8C and a maximum junction temperature of 150¬8C. Proper circuit layout and bypassing techniques are recommended to achieve optimal performance, particularly in high-frequency applications.
IC GATE DRVR LOW-SIDE 6SMD
Low-Side Gate Driver IC Non-Inverting 6-SMD
| Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|
| Product Category | Gate Drivers | Gate Drivers |
| Product Number | IXRFD615 | IXRFD615 |
| Product Name | Integrated Circuits (ICs) - Power Management (PMIC) - Gate Drivers | Gate Drivers |
| Supply Voltage | 18 to 8 volts | 8 to 18 volts |
| Packing Method | Tube; Tube; Other | Tube; Tube; Other |
| Driver Type | Low-side | |
| Output Configuration | Inverting; Noninverting | |
| Output Current | 15 amps |