Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX90N20Q IXFX90N20Q

Description
Manufacturer: IXYS Win Source Part Number: 1049546-IXFX90N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 190nC @ 10V Max Input Capacitance: 6800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 22 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Description
Manufacturer: IXYS Win Source Part Number: 1049546-IXFX90N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 190nC @ 10V Max Input Capacitance: 6800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 22 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX90N20Q - 1049546-IXFX90N20Q - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX90N20Q
1049546-IXFX90N20Q
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX90N20Q 1049546-IXFX90N20Q
Manufacturer: IXYS Win Source Part Number: 1049546-IXFX90N20Q Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 500W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 4mA Max Gate Charge: 190nC @ 10V Max Input Capacitance: 6800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 22 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049546-IXFX90N20Q
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 4mA
Max Gate Charge: 190nC @ 10V
Max Input Capacitance: 6800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 22 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
200V 90A MOSFET Transistor
278-IXFX90N20Q
200V 90A MOSFET Transistor 278-IXFX90N20Q
MOSFET N-CH 200V 90A PLUS247-3 Product overview: IXFX90N20Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX90N20Q can be used for catalog matching and distributor lookup.

MOSFET N-CH 200V 90A PLUS247-3 Product overview: IXFX90N20Q from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 90A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 90A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXFX90N20Q can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX90N20Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX90N20Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX90N20Q
MOSFET N-CH 200V 90A PLUS247-3

MOSFET N-CH 200V 90A PLUS247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 200V 90A

MOSFET 200V 90A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049546-IXFX90N20Q 278-IXFX90N20Q IXFX90N20Q IXFX90N20Q
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX90N20Q 200V 90A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 200 volts
PD 500000 milliwatts 500 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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