Littelfuse, Inc. FETs - Single - IXFX64N60P3 IXFX64N60P3

Description
Manufacturer: IXYS Win Source Part Number: 718798-IXFX64N60P3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PLUS247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 1130W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 64A Rds On (Maximum) at Id, Vgs: 95mOhm at 32A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 145nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 9900pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 718798-IXFX64N60P3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PLUS247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 1130W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 64A Rds On (Maximum) at Id, Vgs: 95mOhm at 32A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 145nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 9900pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - IXFX64N60P3 - 718798-IXFX64N60P3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFX64N60P3
718798-IXFX64N60P3
FETs - Single - IXFX64N60P3 718798-IXFX64N60P3
Manufacturer: IXYS Win Source Part Number: 718798-IXFX64N60P3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PLUS247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 1130W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 64A Rds On (Maximum) at Id, Vgs: 95mOhm at 32A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 145nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 9900pF at 25V

Manufacturer: IXYS
Win Source Part Number: 718798-IXFX64N60P3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PLUS247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 1130W
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 64A
Rds On (Maximum) at Id, Vgs: 95mOhm at 32A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 145nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 9900pF at 25V

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXFX64N60P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFX64N60P3-ND
Single FETs, MOSFETs 238-IXFX64N60P3-ND
N-Channel 600V 64A (Tc) 1130W (Tc) Through Hole PLUS247™-3

N-Channel 600V 64A (Tc) 1130W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Single FETs, MOSFETs - IXFX64N60P3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFX64N60P3
Single FETs, MOSFETs IXFX64N60P3
MOSFET N-CH 600V 64A PLUS247-3

MOSFET N-CH 600V 64A PLUS247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX64N60P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX64N60P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX64N60P3
MOSFET N-CH 600V 64A PLUS247-3

MOSFET N-CH 600V 64A PLUS247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET

MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET

Buy Now

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 718798-IXFX64N60P3 238-IXFX64N60P3-ND IXFX64N60P3 IXFX64N60P3 IXFX64N60P3
Product Name FETs - Single - IXFX64N60P3 Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 600 volts 600 volts
PD 1.13E6 milliwatts 1.13E6 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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