Littelfuse, Inc. Single FETs, MOSFETs IXFX64N60P3

Description
N-Channel 600V 64A (Tc) 1130W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet
Description
N-Channel 600V 64A (Tc) 1130W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXFX64N60P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFX64N60P3-ND
Single FETs, MOSFETs 238-IXFX64N60P3-ND
N-Channel 600V 64A (Tc) 1130W (Tc) Through Hole PLUS247™-3

N-Channel 600V 64A (Tc) 1130W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
FETs - Single - IXFX64N60P3 - 718798-IXFX64N60P3 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - IXFX64N60P3
718798-IXFX64N60P3
FETs - Single - IXFX64N60P3 718798-IXFX64N60P3
Manufacturer: IXYS Win Source Part Number: 718798-IXFX64N60P3 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: PLUS247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Package: TO-247-3 Power Dissipation (Maximum): 1130W Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 600V Id - Continuous Drain Current: 64A Rds On (Maximum) at Id, Vgs: 95mOhm at 32A, 10V Gate Source Voltage(th) (Maximum) at Id: 5V at 4mA Gate Charge (Qg) (Maximum) at Vgs: 145nC at 10V Gate Source Voltage (Maximum): ±30V Input Capacitance (Ciss) (Maximum) at Vds: 9900pF at 25V

Manufacturer: IXYS
Win Source Part Number: 718798-IXFX64N60P3
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PLUS247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 1130W
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 600V
Id - Continuous Drain Current: 64A
Rds On (Maximum) at Id, Vgs: 95mOhm at 32A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 145nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 9900pF at 25V

Buy Now Datasheet
Single FETs, MOSFETs - IXFX64N60P3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFX64N60P3
Single FETs, MOSFETs IXFX64N60P3
MOSFET N-CH 600V 64A PLUS247-3

MOSFET N-CH 600V 64A PLUS247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX64N60P3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX64N60P3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX64N60P3
MOSFET N-CH 600V 64A PLUS247-3

MOSFET N-CH 600V 64A PLUS247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET

MOSFET 600V 64A 0.095Ohm PolarP3 Power MOSFET

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Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXFX64N60P3-ND 718798-IXFX64N60P3 IXFX64N60P3 IXFX64N60P3 IXFX64N60P3
Product Name Single FETs, MOSFETs FETs - Single - IXFX64N60P3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 Variant TO-247; SOT3 TO-247; TO-247-3 Variant 10V
V(BR)DSS 600 volts 600 volts
PD 1.13E6 milliwatts 1.13E6 milliwatts
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