Manufacturer: IXYS
Win Source Part Number: 1191152-IXFX38N80Q2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PLUS247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 735W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 800V
Id - Continuous Drain Current: 38A
Rds On (Maximum) at Id, Vgs: 220mOhm at 19A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs: 190nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 8340pF at 25V
MOSFET N-CH 800V 38A PLUS247-3
POWER FIELD-EFFECT TRANSISTOR, 38A I(D), 800V, 0.22OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR HIPERFET, Q2-CLASS. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191152-IXFX38N80Q2 | IXFX38N80Q2 | 221946878 | IXFX38N80Q2 |
| Product Name | FETs - Single - IXFX38N80Q2 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 800 volts | |||
| PD | 735000 milliwatts |
