Zilog Single FETs, MOSFETs IXFX34N80

Description
N-Channel 800V 34A (Tc) 560W (Tc) Through Hole PLUS247™-3
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Description
N-Channel 800V 34A (Tc) 560W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFX34N80-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFX34N80-ND
Single FETs, MOSFETs IXFX34N80-ND
N-Channel 800V 34A (Tc) 560W (Tc) Through Hole PLUS247™-3

N-Channel 800V 34A (Tc) 560W (Tc) Through Hole PLUS247™-3

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX34N80 - 1049536-IXFX34N80 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX34N80
1049536-IXFX34N80
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX34N80 1049536-IXFX34N80
Manufacturer: IXYS Win Source Part Number: 1049536-IXFX34N80 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 560W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 34A (Tc) Gate-Source Threshold Voltage: 5V @ 8mA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 7500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 240 mOhm @ 17A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049536-IXFX34N80
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 560W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 34A (Tc)
Gate-Source Threshold Voltage: 5V @ 8mA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 7500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 240 mOhm @ 17A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 800V 34A

MOSFET 800V 34A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX34N80 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX34N80
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX34N80
MOSFET N-CH 800V 34A PLUS247

MOSFET N-CH 800V 34A PLUS247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFX34N80-ND 1049536-IXFX34N80 IXFX34N80 IXFX34N80
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX34N80 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 Variant TO-247; SOT3; PLUS247-3 TO-247; TO-247-3 Variant
V(BR)DSS 800 volts
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