Zilog Single FETs, MOSFETs IXFX300N20X3

Description
N-Channel 200V 300A (Tc) 1250W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet
Description
N-Channel 200V 300A (Tc) 1250W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXFX300N20X3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFX300N20X3-ND
Single FETs, MOSFETs IXFX300N20X3-ND
N-Channel 200V 300A (Tc) 1250W (Tc) Through Hole PLUS247™-3

N-Channel 200V 300A (Tc) 1250W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1349893-IXFX300N20X3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1349893-IXFX300N20X3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1349893-IXFX300N20X3
Win Source Part Number: 1349893-IXFX300N20X3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: HiPerFET™, Ultra X3 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Power Dissipation (Max): 1250W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXFX300 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V

Win Source Part Number: 1349893-IXFX300N20X3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: HiPerFET™, Ultra X3
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Power Dissipation (Max): 1250W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFX300
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 150A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V

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Sheung Wan, Hong Kong
MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm

MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX300N20X3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX300N20X3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX300N20X3
MOSFET N-CH 200V 300A PLUS247-3

MOSFET N-CH 200V 300A PLUS247-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFX300N20X3-ND 1349893-IXFX300N20X3 IXFX300N20X3 IXFX300N20X3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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