N-Channel 900V 26A (Tc) 560W (Tc) Through Hole PLUS247™-3
Manufacturer: IXYS
Win Source Part Number: 1323881-IXFX26N90
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 8mA
Power Dissipation (Max): 560W (Tc)
Supplier Device Package: PLUS247™-3
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3 Variant
ECCN: EAR99
Fake Threat In the Open Market: 67
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Moisture Sensitivity Level (MSL): 1 (Unlimited)
MOSFET N-CH 900V 26A PLUS 247
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFX26N90-ND | 1323881-IXFX26N90 | IXFX26N90 | IXFX26N90 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
