Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX26N120P IXFX26N120P

Description
Manufacturer: IXYS Win Source Part Number: 1049534-IXFX26N120P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 960W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 6.5V @ 1mA Max Gate Charge: 225nC @ 10V Max Input Capacitance: 16000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 500 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity per package: 30
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX26N120P - 1049534-IXFX26N120P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXFX26N120P-ND - DigiKey
    DigiKey
  • Transistor - 120535011 - Radwell International
    Radwell International
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX26N120P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049534-IXFX26N120P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 960W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 6.5V @ 1mA Max Gate Charge: 225nC @ 10V Max Input Capacitance: 16000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 500 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity per package: 30
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX26N120P - 1049534-IXFX26N120P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX26N120P
1049534-IXFX26N120P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX26N120P 1049534-IXFX26N120P
Manufacturer: IXYS Win Source Part Number: 1049534-IXFX26N120P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 960W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 1200V Continuous Drain Current at 25°C: 26A (Tc) Gate-Source Threshold Voltage: 6.5V @ 1mA Max Gate Charge: 225nC @ 10V Max Input Capacitance: 16000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 500 mOhm @ 13A, 10V Popularity: Medium Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Limited Quantity per package: 30

Manufacturer: IXYS
Win Source Part Number: 1049534-IXFX26N120P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 960W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 6.5V @ 1mA
Max Gate Charge: 225nC @ 10V
Max Input Capacitance: 16000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 500 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 30

Buy Now Datasheet
Single FETs, MOSFETs - IXFX26N120P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFX26N120P-ND
Single FETs, MOSFETs IXFX26N120P-ND
N-Channel 1200V 26A (Tc) 960W (Tc) Through Hole PLUS247™-3

N-Channel 1200V 26A (Tc) 960W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Transistor - 120535011 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
120535011
Transistor 120535011
MOSFET, N-CHANNEL, 1200V, 26 AMP (TC), 960W (TC), THROUGH HOLE, TO-247-3, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N-CHANNEL, 1200V, 26 AMP (TC), 960W (TC), THROUGH HOLE, TO-247-3, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX26N120P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX26N120P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX26N120P
MOSFET N-CH 1200V 26A PLUS247-3

MOSFET N-CH 1200V 26A PLUS247-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXFX26N120P
MOSFET IXFX26N120P
MOSFET 32 Amps 1200V 0.46 Rds

MOSFET 32 Amps 1200V 0.46 Rds

Buy Now

Technical Specifications

  Win Source Electronics DigiKey Radwell International Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049534-IXFX26N120P IXFX26N120P-ND 120535011 IXFX26N120P IXFX26N120P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX26N120P Single FETs, MOSFETs Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 1200 volts
PD 960000 milliwatts
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