Manufacturer: IXYS
Win Source Part Number: 1049534-IXFX26N120P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 960W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 1200V
Continuous Drain Current at 25°C: 26A (Tc)
Gate-Source Threshold Voltage: 6.5V @ 1mA
Max Gate Charge: 225nC @ 10V
Max Input Capacitance: 16000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 500 mOhm @ 13A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Quantity per package: 30
N-Channel 1200V 26A (Tc) 960W (Tc) Through Hole PLUS247™-3
MOSFET N-CH 1200V 26A PLUS247-3
MOSFET, N-CHANNEL, 1200V, 26 AMP (TC), 960W (TC), THROUGH HOLE, TO-247-3, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Radwell International | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049534-IXFX26N120P | IXFX26N120P-ND | IXFX26N120P | 120535011 | IXFX26N120P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX26N120P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 1200 volts | ||||
| PD | 960000 milliwatts |
