Zilog Single FETs, MOSFETs IXFX210N30X3

Description
N-Channel 300V 210A (Tc) 1250W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet
Description
N-Channel 300V 210A (Tc) 1250W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXFX210N30X3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXFX210N30X3-ND
Single FETs, MOSFETs 238-IXFX210N30X3-ND
N-Channel 300V 210A (Tc) 1250W (Tc) Through Hole PLUS247™-3

N-Channel 300V 210A (Tc) 1250W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1355057-IXFX210N30X3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1355057-IXFX210N30X3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1355057-IXFX210N30X3
Win Source Part Number: 1355057-IXFX210N30X3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 42 pct. MSL Level: 1 (Unlimited) Mfr: IXYS Series: HiPerFET™, Ultra X3 Package: Tube Product Status: Active Package / Case: TO-247-3 Variant Supplier Device Package: PLUS247™-3 Base Product Number: IXFX210 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 300 V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V Vgs(th) (Max) @ Id: 4.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V Power Dissipation (Max): 1250W (Tc) Mounting Type: Through Hole HTSUS: 8541.29.0095 REACH Status: REACH Unaffected ECCN: EAR99

Win Source Part Number: 1355057-IXFX210N30X3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 42 pct.
MSL Level: 1 (Unlimited)
Mfr: IXYS
Series: HiPerFET™, Ultra X3
Package: Tube
Product Status: Active
Package / Case: TO-247-3 Variant
Supplier Device Package: PLUS247™-3
Base Product Number: IXFX210
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 105A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 24200 pF @ 25 V
Power Dissipation (Max): 1250W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX210N30X3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX210N30X3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX210N30X3
MOSFET N-CH 300V 210A PLUS247-3

MOSFET N-CH 300V 210A PLUS247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET DISCMSFT NCHULTRJNCTN X3CLASS

MOSFET DISCMSFT NCHULTRJNCTN X3CLASS

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXFX210N30X3-ND 1355057-IXFX210N30X3 IXFX210N30X3 IXFX210N30X3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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