Zilog Single FETs, MOSFETs IXFX180N10

Description
MOSFET N-CH 100V 180A PLUS247
Request a Quote Datasheet
Description
MOSFET N-CH 100V 180A PLUS247
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFX180N10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFX180N10
Single FETs, MOSFETs IXFX180N10
MOSFET N-CH 100V 180A PLUS247

MOSFET N-CH 100V 180A PLUS247

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX180N10 - 1191145-IXFX180N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX180N10
1191145-IXFX180N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX180N10 1191145-IXFX180N10
Manufacturer: IXYS Win Source Part Number: 1191145-IXFX180N10 Series: HiPerFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Family Name: IXFX180N10 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: PLUS247-3 Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 10900pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 560W (Tc) Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 90A, 10V Alternative Parts (Cross-Reference): STY140NS10; FQH140N10; FQA90N10V2; Introduction Date: September 25, 2000 ECCN: EAR99 Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191145-IXFX180N10
Series: HiPerFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Family Name: IXFX180N10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
RoHS State: Request Verification
Manufacturer Package: PLUS247-3
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 390nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 10900pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 560W (Tc)
Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 90A, 10V
Alternative Parts (Cross-Reference): STY140NS10; FQH140N10; FQA90N10V2;
Introduction Date: September 25, 2000
ECCN: EAR99
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXFX180N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFX180N10-ND
Single FETs, MOSFETs IXFX180N10-ND
N-Channel 100V 180A (Tc) 560W (Tc) Through Hole PLUS247™-3

N-Channel 100V 180A (Tc) 560W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX180N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX180N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX180N10
MOSFET N-CH 100V 180A PLUS247

MOSFET N-CH 100V 180A PLUS247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100V 180A

MOSFET 100V 180A

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFX180N10 1191145-IXFX180N10 IXFX180N10-ND IXFX180N10 IXFX180N10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX180N10 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts
IDSS 180000 milliamps
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