Zilog Single FETs, MOSFETs IXFX180N10

Description
N-Channel 100V 180A (Tc) 560W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet
Description
N-Channel 100V 180A (Tc) 560W (Tc) Through Hole PLUS247™-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFX180N10-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFX180N10-ND
Single FETs, MOSFETs IXFX180N10-ND
N-Channel 100V 180A (Tc) 560W (Tc) Through Hole PLUS247™-3

N-Channel 100V 180A (Tc) 560W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX180N10 - 1191145-IXFX180N10 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX180N10
1191145-IXFX180N10
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX180N10 1191145-IXFX180N10
Manufacturer: IXYS Win Source Part Number: 1191145-IXFX180N10 Series: HiPerFET Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-247-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Family Name: IXFX180N10 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com RoHS State: Request Verification Manufacturer Package: PLUS247-3 Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 4V @ 8mA Gate Charge (Qg) (Maximum) @ Vgs: 390nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 10900pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 560W (Tc) Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 90A, 10V Alternative Parts (Cross-Reference): STY140NS10; FQH140N10; FQA90N10V2; Introduction Date: September 25, 2000 ECCN: EAR99 Estimated EOL Date: 2019 Popularity: Medium Fake Threat In the Open Market: 43 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191145-IXFX180N10
Series: HiPerFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Family Name: IXFX180N10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
RoHS State: Request Verification
Manufacturer Package: PLUS247-3
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 390nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 10900pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 560W (Tc)
Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 90A, 10V
Alternative Parts (Cross-Reference): STY140NS10; FQH140N10; FQA90N10V2;
Introduction Date: September 25, 2000
ECCN: EAR99
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXFX180N10 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFX180N10
Single FETs, MOSFETs IXFX180N10
MOSFET N-CH 100V 180A PLUS247

MOSFET N-CH 100V 180A PLUS247

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 100V 180A

MOSFET 100V 180A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX180N10 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX180N10
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX180N10
MOSFET N-CH 100V 180A PLUS247

MOSFET N-CH 100V 180A PLUS247

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFX180N10-ND 1191145-IXFX180N10 IXFX180N10 IXFX180N10 IXFX180N10
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX180N10 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-247; TO-247-3 Variant TO-247; SOT3 TO-247; TO-247-3 Variant TO-247; TO-247-3 Variant
PD 560000 milliwatts 560000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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