Manufacturer: IXYS
Win Source Part Number: 1191145-IXFX180N10
Series: HiPerFET
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-247-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Family Name: IXFX180N10
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
RoHS State: Request Verification
Manufacturer Package: PLUS247-3
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 4V @ 8mA
Gate Charge (Qg) (Maximum) @ Vgs: 390nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 10900pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 560W (Tc)
Rds On (Maximum) @ Id, Vgs: 8 mOhm @ 90A, 10V
Alternative Parts (Cross-Reference): STY140NS10; FQH140N10; FQA90N10V2;
Introduction Date: September 25, 2000
ECCN: EAR99
Estimated EOL Date: 2019
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
N-Channel 100V 180A (Tc) 560W (Tc) Through Hole PLUS247™-3
MOSFET N-CH 100V 180A PLUS247
MOSFET N-CH 100V 180A PLUS247
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1191145-IXFX180N10 | IXFX180N10-ND | IXFX180N10 | IXFX180N10 | IXFX180N10 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX180N10 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 560000 milliwatts | 560000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-247; SOT3 | TO-247; TO-247-3 Variant | TO-247; TO-247-3 Variant | TO-247; TO-247-3 Variant | |
| Packing Method | Tube; Tube | Tube; Tube |
