Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX140N30P IXFX140N30P

Description
Manufacturer: IXYS Win Source Part Number: 1049530-IXFX140N30P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1040W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 140A (Tc) Gate-Source Threshold Voltage: 5V @ 8mA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 14800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049530-IXFX140N30P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1040W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 140A (Tc) Gate-Source Threshold Voltage: 5V @ 8mA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 14800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX140N30P - 1049530-IXFX140N30P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX140N30P
1049530-IXFX140N30P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX140N30P 1049530-IXFX140N30P
Manufacturer: IXYS Win Source Part Number: 1049530-IXFX140N30P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1040W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PLUS247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 140A (Tc) Gate-Source Threshold Voltage: 5V @ 8mA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 14800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049530-IXFX140N30P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1040W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PLUS247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 140A (Tc)
Gate-Source Threshold Voltage: 5V @ 8mA
Max Gate Charge: 185nC @ 10V
Max Input Capacitance: 14800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 70A, 10V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - IXFX140N30P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXFX140N30P
Single FETs, MOSFETs IXFX140N30P
MOSFET N-CH 300V 140A PLUS247-3

MOSFET N-CH 300V 140A PLUS247-3

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFX140N30P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFX140N30P-ND
Single FETs, MOSFETs IXFX140N30P-ND
N-Channel 300V 140A (Tc) 1040W (Tc) Through Hole PLUS247™-3

N-Channel 300V 140A (Tc) 1040W (Tc) Through Hole PLUS247™-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFX140N30P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFX140N30P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFX140N30P
MOSFET N-CH 300V 140A PLUS247-3

MOSFET N-CH 300V 140A PLUS247-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 140 Amps 300V 0.024 Ohm Rds

MOSFET 140 Amps 300V 0.024 Ohm Rds

Buy Now

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049530-IXFX140N30P IXFX140N30P IXFX140N30P-ND IXFX140N30P IXFX140N30P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFX140N30P Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 300 volts 300 volts
PD 1.04E6 milliwatts 1.04E6 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor - TGF2936 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type die
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SB857C-E - 855126-2SB857C-E - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
GaAs Fet Switches - KS209 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 3000 MHz
View Details