Manufacturer: IXYS
Win Source Part Number: 758871-IXFX100N65X2
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: PLUS247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: TO-247-3
Power Dissipation (Maximum): 1040W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 650V
Id - Continuous Drain Current: 100A
Rds On (Maximum) at Id, Vgs: 30mOhm at 50A, 10V
Gate Source Voltage(th) (Maximum) at Id: 5.5V at 4mA
Gate Charge (Qg) (Maximum) at Vgs: 180nC at 10V
Gate Source Voltage (Maximum): ±30V
Input Capacitance (Ciss) (Maximum) at Vds: 11300pF at 25V
N-Channel 650V 100A (Tc) 1040W (Tc) Through Hole PLUS247™-3
MOSFET N-CH 650V 100A PLUS247-3
MOSFET MOSFET 650V/100A Ultra Junction X2
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 758871-IXFX100N65X2 | 238-IXFX100N65X2-ND | IXFX100N65X2 | IXFX100N65X2 |
| Product Name | FETs - Single - IXFX100N65X2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 650 volts | |||
| PD | 1.04E6 milliwatts |
