MOSFET N-CH 300V 88A TO268
Win Source Part Number: 992493-IXFT88N30P
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Polar
Package: Tube
Standard Package: 30
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 300 V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 600W (Tc)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFT88
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 300V 88A (Tc) 600W (Tc) Surface Mount TO-268AA
MOSFET N-CH 300V 88A TO268
MOSFET POLAR HIPERFET WITH REDUCED RDS 300V 88A
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFT88N30P | 992493-IXFT88N30P | IXFT88N30P-ND | IXFT88N30P | IXFT88N30P |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 300 volts | ||||
| IDSS | 88000 milliamps |
