Manufacturer: IXYS
Win Source Part Number: 1324367-IXFT80N65X2H
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 30
Mounting: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 890W (Tc)
Supplier Device Package: TO-268HV (IXFT)
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
ECCN: EAR99
Fake Threat In the Open Market: 76
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXFT80
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 650V 80A TO268HV
N-Channel 650V 80A (Tc) 890W (Tc) Surface Mount TO-268HV (IXFT)
MOSFET N-CH 650V 80A TO268HV
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1324367-IXFT80N65X2HV | IXFT80N65X2HV | 238-IXFT80N65X2HV-ND | IXFT80N65X2HV | IXFT80N65X2HV |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 890000 milliwatts | 890000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3; TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
