IXFT4N100Q is an N-channel enhancement mode MOSFET rated for 1000 V drain-source voltage and 4 A continuous drain current, designed for high-power switching applications. It is packaged in the TO-268 (D3) surface-mount case, measuring 13.80-14.00 mm in length and 15.85-16.05 mm in width. The device has a maximum on-state resistance of 3.0 Ω at 25°C and is avalanche rated with an energy rating of 20 mJ. It meets UL 94 V-0 flammability standards and supports unclamped inductive switching. The gate charge is 39 nC, and the device has a thermal resistance from junction to case of 0.8 K/W.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFT4N100Q |
| Product Name | MOSFET |
