Manufacturer: IXYS
Win Source Part Number: 777624-IXFT23N80Q
Series: HiPerFET
Packaging: Bulk
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Family Name: IXFT23N80Q
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-268
Channel Type Type: N
Drain Source Voltage: 800V
Vgs(th) (Maximum) @ Id: 4.5V @ 3mA
Gate Charge (Qg) (Maximum) @ Vgs: 130nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4900pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 500W (Tc)
Rds On (Maximum) @ Id, Vgs: 420 mOhm @ 500mA, 10V
Alternative Parts (Cross-Reference): APT8043SFLL; APT8043SLL; APT8043SLLG; APT22F80S;
Introduction Date: February 19, 2004
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
MOSFET N-CH 800V 23A TO268
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 777624-IXFT23N80Q | IXFT23N80Q | IXFT23N80Q |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFT23N80Q | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| PD | 500000 milliwatts |