Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFT13N80Q

Description
Win Source Part Number: 1001111-IXFT13N80Q Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Q Class Package: Tube Standard Package: 30 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 250W (Tc) Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXFT13 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1001111-IXFT13N80Q Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Q Class Package: Tube Standard Package: 30 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 250W (Tc) Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXFT13 Drive Voltage (Max Rds On, Min Rds On): 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1001111-IXFT13N80Q - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1001111-IXFT13N80Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1001111-IXFT13N80Q
Win Source Part Number: 1001111-IXFT13N80Q Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Q Class Package: Tube Standard Package: 30 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 4mA Power Dissipation (Max): 250W (Tc) Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXFT13 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1001111-IXFT13N80Q
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Q Class
Package: Tube
Standard Package: 30
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 250W (Tc)
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFT13
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET 13 Amps 800V 0.8 Rds

MOSFET 13 Amps 800V 0.8 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFT13N80Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFT13N80Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFT13N80Q
MOSFET N-CH 800V 13A TO268

MOSFET N-CH 800V 13A TO268

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1001111-IXFT13N80Q IXFT13N80Q IXFT13N80Q
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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