IXYS Corporation Electronic Surplus - IXFR55N50 IXFR55N50

Description
Manufacturer: IXYS Win Source Part Number: 1191134-IXFR55N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOPLUS247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: ISOPLUS247 Power Dissipation (Maximum): 400W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 48A Rds On (Maximum) at Id, Vgs: 90mOhm at 27.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V
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Description
Manufacturer: IXYS Win Source Part Number: 1191134-IXFR55N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOPLUS247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: ISOPLUS247 Power Dissipation (Maximum): 400W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 48A Rds On (Maximum) at Id, Vgs: 90mOhm at 27.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V
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Electronic Surplus - IXFR55N50 - 1191134-IXFR55N50 - Win Source Electronics
Laguna Hills, CA, United States
Electronic Surplus - IXFR55N50
1191134-IXFR55N50
Electronic Surplus - IXFR55N50 1191134-IXFR55N50
Manufacturer: IXYS Win Source Part Number: 1191134-IXFR55N50 Packaging: Tube Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: ISOPLUS247 Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -40°C ~ 150°C Manufacturer Homepage: www.ixys.com Manufacturer Package: ISOPLUS247 Power Dissipation (Maximum): 400W Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 30 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 48A Rds On (Maximum) at Id, Vgs: 90mOhm at 27.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V

Manufacturer: IXYS
Win Source Part Number: 1191134-IXFR55N50
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: ISOPLUS247
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Homepage: www.ixys.com
Manufacturer Package: ISOPLUS247
Power Dissipation (Maximum): 400W
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 30
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 48A
Rds On (Maximum) at Id, Vgs: 90mOhm at 27.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 8mA
Gate Charge (Qg) (Maximum) at Vgs: 330nC at 10V
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 9400pF at 25V

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Technical Specifications

  Win Source Electronics
Product Category Uncategorized Products
Product Number 1191134-IXFR55N50
Product Name Electronic Surplus - IXFR55N50
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