Win Source Part Number: 1022152-IXFR24N100Q3
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Q3 Class
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247™
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFR24
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 1000V 18A (Tc) 500W (Tc) Through Hole ISOPLUS247™
MOSFET N-CH 1000V 18A ISOPLUS247
MOSFET N-CH 1000V 18A ISOPLUS247
MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1022152-IXFR24N100Q3 | IXFR24N100Q3-ND | IXFR24N100Q3 | IXFR24N100Q3 | IXFR24N100Q3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||
| PD | 500000 milliwatts | 500000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | SOT3 | TO-247; TO-247-3 | Through Hole | TO-247; TO-247-3 |
