Zilog Single FETs, MOSFETs IXFR24N100

Description
N-Channel 1000V 22A (Tc) 416W (Tc) Through Hole ISOPLUS247™
Request a Quote Datasheet
Description
N-Channel 1000V 22A (Tc) 416W (Tc) Through Hole ISOPLUS247™
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IXFR24N100-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFR24N100-ND
Single FETs, MOSFETs IXFR24N100-ND
N-Channel 1000V 22A (Tc) 416W (Tc) Through Hole ISOPLUS247™

N-Channel 1000V 22A (Tc) 416W (Tc) Through Hole ISOPLUS247™

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1382386-IXFR24N100 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1382386-IXFR24N100
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1382386-IXFR24N100
Win Source Part Number: 1382386-IXFR24N100 Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Series: HiPerFET™ Package: Tube Standard Package: 30 pcs Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5.5V @ 8mA Power Dissipation (Max): 416W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247™ Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXFR24 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information REACH Status: REACH Unaffected

Win Source Part Number: 1382386-IXFR24N100
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Series: HiPerFET™
Package: Tube
Standard Package: 30 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Power Dissipation (Max): 416W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247™
Gate Charge (Qg) (Max) @ Vgs: 267 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFR24
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
REACH Status: REACH Unaffected

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFR24N100 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFR24N100
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFR24N100
MOSFET N-CH 1KV 22A ISOPLUS247

MOSFET N-CH 1KV 22A ISOPLUS247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 1KV 22A

MOSFET 1KV 22A

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFR24N100-ND 1382386-IXFR24N100 IXFR24N100 IXFR24N100
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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