N-Channel 1200V 13A (Tc) 290W (Tc) Through Hole ISOPLUS247™
MOSFET N-CH 1200V 13A ISOPLUS247
Win Source Part Number: 1382385-IXFR20N120P
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Polar
Package: Tube
Standard Package: 30 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Power Dissipation (Max): 290W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247™
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFR20
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Moisture Sensitivity Level (MSL): 1 (Unlimited)
MOSFET N-CH 1200V 13A ISOPLUS247
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXFR20N120P-ND | IXFR20N120P | 1382385-IXFR20N120P | IXFR20N120P | IXFR20N120P |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Package Type | TO-247; TO-247-3 | TO-247; TO-247-3 | SOT3 | TO-247; TO-247-3 | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||
| V(BR)DSS | 1200 volts |
