Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP76N15T2 IXFP76N15T2

Description
Manufacturer: IXYS Win Source Part Number: 205688-IXFP76N15T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 76A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 97nC @ 10V Max Input Capacitance: 5800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 38A, 10V Alternative Parts (Cross-Reference): IPP200N15N3G; P1615AT; IXFP76N15T2; IXTP90N15T; Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 50
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Description
Manufacturer: IXYS Win Source Part Number: 205688-IXFP76N15T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 76A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 97nC @ 10V Max Input Capacitance: 5800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 38A, 10V Alternative Parts (Cross-Reference): IPP200N15N3G; P1615AT; IXFP76N15T2; IXTP90N15T; Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP76N15T2 - 205688-IXFP76N15T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP76N15T2
205688-IXFP76N15T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP76N15T2 205688-IXFP76N15T2
Manufacturer: IXYS Win Source Part Number: 205688-IXFP76N15T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 76A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 97nC @ 10V Max Input Capacitance: 5800pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 20 mOhm @ 38A, 10V Alternative Parts (Cross-Reference): IPP200N15N3G; P1615AT; IXFP76N15T2; IXTP90N15T; Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 205688-IXFP76N15T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 76A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 97nC @ 10V
Max Input Capacitance: 5800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 20 mOhm @ 38A, 10V
Alternative Parts (Cross-Reference): IPP200N15N3G; P1615AT; IXFP76N15T2; IXTP90N15T;
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IXFP76N15T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFP76N15T2-ND
Single FETs, MOSFETs IXFP76N15T2-ND
N-Channel 150V 76A (Tc) 350W (Tc) Through Hole TO-220-3

N-Channel 150V 76A (Tc) 350W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFP76N15T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFP76N15T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFP76N15T2
MOSFET N-CH 150V 76A TO220AB

MOSFET N-CH 150V 76A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET TRENCHT2 HIPERFET PWR MOSFET 150V 76A

MOSFET TRENCHT2 HIPERFET PWR MOSFET 150V 76A

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205688-IXFP76N15T2 IXFP76N15T2-ND IXFP76N15T2 IXFP76N15T2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXFP76N15T2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts
PD 350000 milliwatts
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