Littelfuse, Inc. Single FETs, MOSFETs IXFP4N100Q

Description
N-Channel 1000V 4A (Tc) 150W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 1000V 4A (Tc) 150W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

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Single FETs, MOSFETs - IXFP4N100Q-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFP4N100Q-ND
Single FETs, MOSFETs IXFP4N100Q-ND
N-Channel 1000V 4A (Tc) 150W (Tc) Through Hole TO-220-3

N-Channel 1000V 4A (Tc) 150W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1083569-IXFP4N100Q - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1083569-IXFP4N100Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1083569-IXFP4N100Q
Win Source Part Number: 1083569-IXFP4N100Q Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Q Class Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5V @ 1.5mA Power Dissipation (Max): 150W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STP5NK80Z; STP5NK100Z; STP7NK80Z; FQP4N90C; FQP4N90; IPP90R1K2C3XKSA1; ECCN: EAR99 Fake Threat In the Open Market: 51 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXFP4N100 Product Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1083569-IXFP4N100Q
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Q Class
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Power Dissipation (Max): 150W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STP5NK80Z; STP5NK100Z; STP7NK80Z; FQP4N90C; FQP4N90; IPP90R1K2C3XKSA1;
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFP4N100
Product Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFP4N100Q - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFP4N100Q
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFP4N100Q
MOSFET N-CH 1000V 4A TO220AB

MOSFET N-CH 1000V 4A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFP4N100Q-ND 1083569-IXFP4N100Q IXFP4N100Q
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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