Win Source Part Number: 974329-IXFP34N65X2
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Ultra X2
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Power Dissipation (Max): 540W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: IXFP34N65X2X,IXFP34N
Base Product Number: IXFP34
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 650V 34A TO220AB
N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-220-3
MOSFET 650V/34A Ultra Junction X2-Class
MOSFET N-CH 650V 34A TO220AB
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 974329-IXFP34N65X2 | IXFP34N65X2 | 238-IXFP34N65X2-ND | IXFP34N65X2 | IXFP34N65X2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | ||
| PD | 540000 milliwatts | 540000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-220; SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | 56 nC @ 10 V |
