Win Source Part Number: 1028159-IXFP26N50P3
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Polar3™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 13A, 10V
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 500W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2220 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FDP20N50; IRFB20N50KPBF; FDPF20N50; SIHP25N40D-GE3; FDP19N40; SIHP22N60E-GE3;
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFP26
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 500V 26A (Tc) 500W (Tc) Through Hole TO-220-3
MOSFET N-CH 500V 26A TO220AB
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1028159-IXFP26N50P3 | IXFP26N50P3-ND | IXFP26N50P3 | IXFP26N50P3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
