N-Channel 850V 20A (Tc) 540W (Tc) Through Hole TO-220-3
Win Source Part Number: 962089-IXFP20N85X
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, Ultra X
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 850 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Power Dissipation (Max): 540W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFP20
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 850V 20A TO220AB
MOSFET 850V Ultra Junction X-Class Pwr MOSFET
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXFP20N85X-ND | 962089-IXFP20N85X | IXFP20N85X | IXFP20N85X |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |