Win Source Part Number: 1176319-IXFP180N10T2
Category: Discrete Semiconductor Products>Transistors
Series: HiPerFET™, TrenchT2™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 480W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IXFP 180N10T2;
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFP180
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 100V 180A (Tc) 480W (Tc) Through Hole TO-220-3
MOSFET TRENCHT2 HIPERFET PWR MOSFET 100V 180A
MOSFET N-CH 100V 180A TO220AB
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1176319-IXFP180N10T2 | IXFP180N10T2-ND | IXFP180N10T2 | IXFP180N10T2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |