Zilog Single FETs, MOSFETs IXFP130N10T2

Description
N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-220-3
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Description
N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Description
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Single FETs, MOSFETs - IXFP130N10T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFP130N10T2-ND
Single FETs, MOSFETs IXFP130N10T2-ND
N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-220-3

N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1224689-IXFP130N10T2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1224689-IXFP130N10T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1224689-IXFP130N10T2
Win Source Part Number: 1224689-IXFP130N10T2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, TrenchT2™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 360W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXFP130 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1224689-IXFP130N10T2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, TrenchT2™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 360W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXFP130
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFP130N10T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFP130N10T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFP130N10T2
MOSFET N-CH 100V 130A TO220AB

MOSFET N-CH 100V 130A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Trench T2 HiperFET Power MOSFET

MOSFET Trench T2 HiperFET Power MOSFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFP130N10T2-ND 1224689-IXFP130N10T2 IXFP130N10T2 IXFP130N10T2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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