Littelfuse, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXFP12N50P

Win Source Part Number: 1028157-IXFP12N50P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Polar
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 200W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FQP13N50; STP14NK50Z; STP12NM50; STP13NK60Z; FDP15N65; IPP50R399CPXKSA1;
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: -IXFP12N50P
Base Product Number: IXFP12
Drive Voltage (Max Rds On, Min Rds On): 10V

N-Channel 500V 12A (Tc) 200W (Tc) Through Hole TO-220-3