Littelfuse, Inc. Single FETs, MOSFETs IXFP12N50P

Description
N-Channel 500V 12A (Tc) 200W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 500V 12A (Tc) 200W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXFP12N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFP12N50P-ND
Single FETs, MOSFETs IXFP12N50P-ND
N-Channel 500V 12A (Tc) 200W (Tc) Through Hole TO-220-3

N-Channel 500V 12A (Tc) 200W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1028157-IXFP12N50P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1028157-IXFP12N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1028157-IXFP12N50P
Win Source Part Number: 1028157-IXFP12N50P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: HiPerFET™, Polar Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 5.5V @ 1mA Power Dissipation (Max): 200W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FQP13N50; STP14NK50Z; STP12NM50; STP13NK60Z; FDP15N65; IPP50R399CPXKSA1; ECCN: EAR99 Fake Threat In the Open Market: 72 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: -IXFP12N50P Base Product Number: IXFP12 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1028157-IXFP12N50P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: HiPerFET™, Polar
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 200W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FQP13N50; STP14NK50Z; STP12NM50; STP13NK60Z; FDP15N65; IPP50R399CPXKSA1;
ECCN: EAR99
Fake Threat In the Open Market: 72 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: -IXFP12N50P
Base Product Number: IXFP12
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET HiPERFET Id12 BVdass500

MOSFET HiPERFET Id12 BVdass500

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXFP12N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXFP12N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXFP12N50P
MOSFET N-CH 500V 12A TO220AB

MOSFET N-CH 500V 12A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXFP12N50P-ND 1028157-IXFP12N50P IXFP12N50P IXFP12N50P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Unlock Full Specs
to access all available technical data